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We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for MOCVD Gan,Gan On Sic,Gan Substrate,Epi Growth,Gan On Sic Substrate, We have been prepared to offer you the top suggestions on the designs of one's orders in a professional way if you need. During the meantime, we retain on developing new technologies and building new designs so as for making you ahead within the line of this business.
MOCVD Gan, We aim to build a famous brand which can influence a certain group of people and light up the whole world. We want our staff to realize self-reliance, then achieve financial freedom, lastly obtain time and spiritual freedom. We do not focus on how much fortune we can make, instead we aim to obtain high reputation and be recognized for our products and solutions. As a result, our happiness comes from our clients satisfaction rather than how much money we earn. Ours team will do best in your case always.

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    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

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