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Tantalum Carbide Coated Porous Graphite

Tantalum Carbide Coated Porous Graphite

Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.

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Product Description


Semicorex Tantalum Carbide Coated Porous Graphite is specifically designed to optimize various aspects of the SiC crystal growth process, including vapor component filtration, local temperature gradient adjustment, flow direction guidance, and leakage control.


The porous nature of the Tantalum Carbide Coated Porous Graphite allows for effective filtration of vapor components during the SiC crystal growth process. This ensures that only the desired materials contribute to crystal formation, improving purity and overall quality. Maintaining precise temperature control is crucial in crystal growth. The Tantalum Carbide Coated Porous Graphite enhances the thermal stability and conductivity of the porous graphite, allowing for more accurate adjustments of local temperature gradients. This leads to better control over crystal morphology and growth rate. The structural design of the Tantalum Carbide Coated Porous Graphite, combined with the TaC coating, facilitates the guided flow of substances. This ensures that materials are delivered exactly where needed, promoting uniform crystal growth and reducing the likelihood of defects. Effective control of material leakage is vital for maintaining the integrity of the growth environment. TheTantalum Carbide Coated Porous Graphite provides excellent sealing properties, preventing unwanted leaks and ensuring a stable and controlled growth atmosphere.


Advantages of Tantalum Carbide Coated Porous Graphite:


High Melting Point and Thermal Stability: TaC has an exceptionally high melting point (around 3880°C) and excellent thermal stability, making the Tantalum Carbide Coated Porous Graphite ideal for high-temperature applications such as SiC crystal growth.

Chemical Inertness: TaC is highly resistant to chemical reactions, ensuring that the coating remains intact and effective even in aggressive environments.

Enhanced Durability: The TaC coating significantly increases the durability of the porous graphite, extending the Tantalum Carbide Coated Porous Graphite operational lifespan and reducing the need for frequent replacements.

High Porosity: The high porosity of the graphite allows for efficient filtration and flow control, essential for high-quality crystal growth.

Lightweight and Strong: Porous graphite is both lightweight and mechanically strong, making it easy to handle and capable of withstanding the rigors of the crystal growth process.

Thermal Conductivity: Graphite's excellent thermal conductivity ensures efficient heat distribution, crucial for maintaining consistent temperature gradients.


Semicorex Tantalum Carbide Coated Porous Graphite represents a significant advancement in SiC crystal growth materials. By combining the unique properties of TaC with the inherent advantages of porous graphite, this material provides superior performance in vapor component filtration, temperature gradient adjustment, flow direction guidance, and leakage control. Its robust thermal stability, chemical inertness, and enhanced durability make it an invaluable asset in the pursuit of high-quality SiC crystals.



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