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    6 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Graphite Felt

    Graphite Felt

    Semicorex Graphite Felt is a flexible, lightweight, and highly efficient thermal insulation material, ideal for high-temperature applications. Semicorex offers superior-quality graphite felts that deliver exceptional durability and reliability, making them the optimal choice for industries demanding advanced insulation solutions.*
  • Aluminum Nitride Ceramic Chuck

    Aluminum Nitride Ceramic Chuck

    Semicorex Aluminum Nitride Ceramic Chuck represents a cutting-edge solution for semiconductor wafer processing, specifically designed to securely hold wafers in place during various stages of manufacturing. Functioning as an electrostatic chuck (ESC), this innovative device leverages the exceptional properties of aluminum nitride ceramic to ensure precise and reliable wafer retention. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LNOI Wafer

    LNOI Wafer

    Semicorex LNOI Wafer: High-performance Lithium Niobate on Insulator wafers with customizable substrates for advanced photonics and RF applications. With precision engineering, customizable options, and superior material quality, Semicorex ensures high-performance LNOI wafers tailored to your application needs.*
  • Second Half Parts for Lower Baffles in Epitaxial Process

    Second Half Parts for Lower Baffles in Epitaxial Process

    Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Heater

    MOCVD Heater

    The MOCVD Heater by Semicorex is a highly advanced and meticulously engineered component that offers a multitude of advantages, including exceptional chemical purity, thermal efficiency, electrical conductivity, high emissivity, corrosion resistance, inoxidizability, and mechanical strength.**
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  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

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