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    CVD and CVI Vacuum Furnace

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated products in China. We provide custom furnace solutions. Our CVD and CVI Vacuum Furnace has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Tubes

    SiC Tubes

    Semicorex SiC Tubes are silicon carbide furnace tubes designed for semiconductor high-temperature processes, with excellent thermal stability and chemical corrosion resistance. Choosing Semicorex high-purity raw materials, precision manufacturing processes and long-term reliability guarantees to provide solid support for your semiconductor manufacturing process.*
  • Silicon Carbide Coated Barrel Susceptor

    Silicon Carbide Coated Barrel Susceptor

    Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • Silicon Carbide Bushing

    Silicon Carbide Bushing

    Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure Silicon Carbide Bushing ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

  • What is a Dummy Wafer?

    In the semiconductor manufacturing process, wafers form the foundation of chip production. Among these, a special type of wafer, referred to as the Dummy Wafer, plays a pivotal role in ensuring equipment stability and controlling production costs.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • LPE is the important method for preparing P-type 4H-SiC single crystal and 3C-SiC single crystal

    As a third-generation wide bandgap semiconductor material, SiC (silicon carbide) has excellent physical and electrical properties, which makes it have broad application prospects in the field of power semiconductor devices.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

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