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  • SiC Chuck

    SiC Chuck

    Semicorex SiC Chuck, or Silicon Carbide Chuck, is a specialized component primarily used in semiconductor manufacturing and precision machining applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Wafer Carriers

    Wafer Carriers

    Semicorex Wafer carriers, also known as wafer cassettes, play a critical role in maintaining these standards. These specialized containers are designed to safely store and transport silicon wafers, which are the foundational material for semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
  • Wafer Carrier Tray

    Wafer Carrier Tray

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • 10x10mm Nonpolar M-plane Aluminum Substrate

    10x10mm Nonpolar M-plane Aluminum Substrate

    The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
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  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

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