China MOCVD Growth Manufacturers, Suppliers, Factory

The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

As a new separation technology, the core of ceramic membrane filtration equipment is the ceramic membrane (filter element).