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SiC Susceptor for MOCVD, Since the establishment of our company, we have realized the importance of providing good quality products and the best before-sales and after-sales services. Most problems between global suppliers and clients are due to poor communication. Culturally, suppliers can be reluctant to question things they do not understand. We break down those barriers to ensure you get what you want to the level you expect, when you want it.

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  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Half Parts Drum Products Epitaxial Part

    Half Parts Drum Products Epitaxial Part

    Enhance the functionality and efficiency of your semiconductor devices with our cutting-edge Half Parts Drum Products Epitaxial Part. Specifically designed for the LPE reactor's intake components, this semi-cylindrical accessory plays a pivotal role in optimizing your semiconductor processes.
    Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • SiC Coated Plate

    SiC Coated Plate

    Semicorex SiC Coated Plate is a precision-engineered component made from graphite with a high-purity silicon carbide coating, designed for demanding epitaxial applications. Choose Semicorex for its industry-leading CVD coating technology, strict quality control, and proven reliability in semiconductor manufacturing environments.*
  • SiC Coated Heaters

    SiC Coated Heaters

    Semicorex SiC Coated Heaters are CVD SiC-coated graphite heating components designed for semiconductor thermal fields, providing efficient heat generation, excellent corrosion resistance, and long-term reliability in high-temperature processing equipment. Semicorex supplies customized SiC-coated graphite heaters and complete thermal field solutions to semiconductor manufacturers worldwide, backed by advanced CVD coating technology, precision engineering, and dependable global delivery.*
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  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • How to classify semiconductors

    There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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