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China CVD Graphite Manufacturers, Suppliers, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for CVD Graphite,Silicon Wafers,Growth Chamber,Planet Carrier,Si Single Crystal, With our rules of " small business track record, partner trust and mutual benefit", welcome all of you to definitely work together , expand with each other.
CVD Graphite, We always insist on the principle of "Quality and service are the life of the product". Till now, our products have been exported to more than 20 countries under our strict quality control and high level service.

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    Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
  • MOCVD Heater

    MOCVD Heater

    The MOCVD Heater by Semicorex is a highly advanced and meticulously engineered component that offers a multitude of advantages, including exceptional chemical purity, thermal efficiency, electrical conductivity, high emissivity, corrosion resistance, inoxidizability, and mechanical strength.**
  • High Purity Quartz Bell Jar

    High Purity Quartz Bell Jar

    Designed to offer unparalleled performance in extreme conditions, Semicorex High Purity Quartz Bell Jar combines exceptional material properties to meet the stringent demands of semiconductor manufacturing.**
  • SiC Plate

    SiC Plate

    SiC Plate from Semicorex is an indispensable tool for any manufacturer in the LED industry looking to optimize their ICP etching processes. With its exceptional material properties, precision engineering, and ease of integration, our SiC Plate is the ideal choice for enhancing efficiency and product quality. Trust Semicorex to deliver the solutions you need to stay at the forefront of the semiconductor industry.*
  • SiC Membrane

    SiC Membrane

    Semicorex SiC Membrane is a high-performance ceramic filtration solution made from high-purity silicon carbide, designed for challenging industrial filtration applications. Choose Semicorex for reliable, durable, and efficient SiC membranes that deliver exceptional performance and long-term value in even the most demanding environments.*
  • Graphite Rod Heater

    Graphite Rod Heater

    Semicorex Graphite Rod Heater is a high-performance heating element designed for uniform high-temperature generation inside vacuum furnaces. Choose Semicorex for its expertise in precision-engineered graphite solutions, delivering superior thermal stability and long-lasting performance tailored to your industrial needs.*
  • Related Blog
  • Reviews

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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