English
Home > Products > MOCVD Machine

China MOCVD Machine Manufacturers, Suppliers, Factory

To consistently enhance the management method by virtue of the rule of ""sincerely, fantastic religion and top quality are the base of business development"", we extensively absorb the essence of associated goods internationally, and constantly acquire new merchandise to satisfy the needs of shoppers for MOCVD Machine,Crystal Growing,Graphite Plate,300mm Silicon Wafer,Epitaxial Wafer Manufacturers, Now we now have established steady and lengthy company associations with clients from North America, Western Europe, Africa, South America, extra than 60 countries and regions.
MOCVD Machine, We aspire to meet the demands of our customers globally. Our range of solutions and services is continuously expanding to meet customers' requirements. We welcome new and old customers from all walks of life to contact us for future business relationships and achieving mutual success!

Related Products

Hot Products

  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Silicon Epitaxy Susceptors

    Silicon Epitaxy Susceptors

    You can rest assured to buy Silicon Epitaxy Susceptors from our factory. Semicorex's Silicon Epitaxy Susceptor is a high-quality, high-purity product used in the semiconductor industry for epitaxial growth of the wafer chip. Our product has a superior coating technology that ensures the coating is present on all surfaces, preventing peeling off. The product is stable at high temperatures up to 1600°C, making it suitable for use in extreme environments.
  • Electrostatic Chuck

    Electrostatic Chuck

    Semicorex Electrostatic Chuck (ESC) is an advanced component used in semiconductor manufacturing, designed to securely hold semiconductor wafers during various processing stages. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
  • SiC O Ring

    SiC O Ring

    Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
  • Graphite Electrode Rod

    Graphite Electrode Rod

    Semicorex Graphite Electrode Rods are high-purity graphite components used as core heating elements in vacuum furnaces. Choose Semicorex for unmatched material quality, precision machining, and reliable performance in high-temperature vacuum environments.*
  • Semiconductor Graphite Heater

    Semiconductor Graphite Heater

    Semicorex semiconductor graphite heater is a high-efficiency heating device made from high-quality isostatic graphite. It is widely used in the core process links of semiconductor manufacturing, such as the thermal field of crystal growth furnaces, epitaxial growth processes, ion implantation equipment, plasma etching equipment, and the production of semiconductor device sintering molds.
  • Related Blog
  • Reviews

  • TSMC: 2nm process risk trial production next year

    In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept