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"Based on domestic market and expand abroad business" is our enhancement strategy for aixtron mocvd,epi reactor,aixtron g5,graphite susceptor,epitaxial growth, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships.
aixtron mocvd, Since our establishment, we keep on improving our products and solutions and customer service. We have been able to supply you with a wide range of high quality hair items at competitive prices. Also we can produce different hair merchandise according to your samples. We insist on high quality and reasonable price. Except this, we provide best OEM service. We warmly welcome OEM orders and customers all over the world to cooperate with us for mutual development in the future.

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  • Inductively Heated Barrel Epi System

    Inductively Heated Barrel Epi System

    If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Etching Wafer Carrier

    Etching Wafer Carrier

    Semicorex Etching Wafer Carrier with CVD SiC Coating is an advanced, high-performance solution tailored for demanding semiconductor etching applications. Its superior thermal stability, chemical resistance, and mechanical durability make it an essential component in modern wafer fabrication, ensuring high efficiency, reliability, and cost-effectiveness for semiconductor manufacturers worldwide.*
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

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