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"Based on domestic market and expand abroad business" is our enhancement strategy for aixtron mocvd,epi reactor,aixtron g5,graphite susceptor,epitaxial growth, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships.
aixtron mocvd, Since our establishment, we keep on improving our products and solutions and customer service. We have been able to supply you with a wide range of high quality hair items at competitive prices. Also we can produce different hair merchandise according to your samples. We insist on high quality and reasonable price. Except this, we provide best OEM service. We warmly welcome OEM orders and customers all over the world to cooperate with us for mutual development in the future.

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  • SiC Ceramic Heat Transfer Plates

    SiC Ceramic Heat Transfer Plates

    Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • Wafer Carrier

    Wafer Carrier

    Semicorex SiC-coated graphite Wafer Carrier is designed to provide reliable wafer handling during semiconductor epitaxial growth processes, offering high-temperature resistance and excellent thermal conductivity. With advanced material technology and a focus on precision, Semicorex delivers superior performance and durability, ensuring optimal outcomes for the most demanding semiconductor applications.*
  • Porous Ceramic Chuck

    Porous Ceramic Chuck

    Semicorex Porous Ceramic Chuck (Vacuum Chuck) is a high-precision tool designed to securely hold wafers during semiconductor manufacturing processes. By choosing Semicorex, you benefit from a solution that offers exceptional performance, durability, and customization options, ensuring enhanced production efficiency and consistent quality standards.*
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
  • Plasma Processing Focus Ring

    Plasma Processing Focus Ring

    Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.
  • Related Blog
  • Reviews

  • Knowing MOCVD

    MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

  • Annealing

    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • MOCVD is the key equipment

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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