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aixtron mocvd, Since our establishment, we keep on improving our products and solutions and customer service. We have been able to supply you with a wide range of high quality hair items at competitive prices. Also we can produce different hair merchandise according to your samples. We insist on high quality and reasonable price. Except this, we provide best OEM service. We warmly welcome OEM orders and customers all over the world to cooperate with us for mutual development in the future.

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  • TaC Coating Wafer Susceptor

    TaC Coating Wafer Susceptor

    Semicorex TaC Coating Wafer Susceptor is a graphite tray coated with tantalum carbide, used in silicon carbide epitaxial growth to enhance wafer quality and performance. Choose Semicorex for its advanced coating technology and durable solutions that ensure superior SiC epitaxy results and extended susceptor lifespan.*
  • Al2O3 Vacuum Chuck

    Al2O3 Vacuum Chuck

    Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
  • C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites is a new type of thermal structure/functional integration material that combines the advantages of metal, ceramic and carbon materials, and has the characteristics of high-temperature resistance, low density, high strength ratio, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, and no catastrophic damage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Parts

    Graphite Parts

    Semicorex isostatic graphite parts are mainly used for graphite crucibles in the crystal growth process, three-petal ring high-purity graphite and TaC coating applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • 4

    4" Gallium Oxide Substrates

    Semicorex 4" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 4" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
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  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • What is isostatic graphite?

    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

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