English
Home > Products > MOCVD Reactor Design

China MOCVD Reactor Design Manufacturers, Suppliers, Factory

We depend on sturdy technical force and continually create sophisticated technologies to satisfy the demand of MOCVD Reactor Design,Silicon Carbide Substrate,Epitaxy Semiconductor,GaN MOCVD,GaN Epitaxial Growth, Our skilled complex workforce is going to be wholeheartedly at your assistance. We sincerely welcome you to definitely pay a visit to our site and firm and deliver us your inquiry.
MOCVD Reactor Design, To achieve reciprocal advantages, our company is widely boosting our tactics of globalization in terms of communication with overseas customers, fast delivery, the best quality and long-term cooperation. Our company upholds the spirit of "innovation, harmony, team work and sharing, trails, pragmatic progress". Give us a chance and we'll prove our capability. With your kind help, we believe that we can create a bright future with you together.

Related Products

Hot Products

  • Porous SiC Chuck

    Porous SiC Chuck

    Semicorex Porous SiC Chuck is a high-performance ceramic vacuum chuck designed for secure and uniform wafer adsorption in semiconductor processing. Its engineered micro-porous structure ensures excellent vacuum distribution, making it ideal for precision applications.*
  • Aluminum Nitride Insulator Rings

    Aluminum Nitride Insulator Rings

    Semicorex Aluminum Nitride Insulator Rings are indispensable components in advanced semiconductor manufacturing, particularly in high-frequency heat treatment processes. Their unique combination of high-temperature stability, superior sealing properties, exceptional thermal conductivity, and inherent durability makes them essential for ensuring precise process control, high device yields, and extended equipment lifespan in the demanding environment of semiconductor fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Insulator Rings that fuse quality with cost-efficiency.**
  • SiC Graphite RTP Carrier Plate for MOCVD

    SiC Graphite RTP Carrier Plate for MOCVD

    Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Wafer Holder

    SiC Wafer Holder

    Semicorex SiC (Silicon Carbide) SiC Wafer Holder, also known as a wafer chuck or wafer carrier, is a specialized tool used in the handling and processing of semiconductor wafers. It is designed to securely hold and protect the delicate silicon carbide wafers during various stages of fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Related Blog
  • Reviews

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept