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Liquid Phase Epitaxy (LPE) Reactor System

Liquid Phase Epitaxy (LPE) Reactor System

Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.

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Product Description

Our Liquid Phase Epitaxy (LPE) Reactor System is a highly reliable and durable product that provides excellent value for money. Its high-temperature oxidation resistance, even thermal profile, and prevention of contamination make it ideal for high-quality epitaxial layer growth. Its low maintenance requirements and customizability make it a highly competitive product in the market.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Liquid Phase Epitaxy (LPE) Reactor System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Contact us today to learn more about our Liquid Phase Epitaxy (LPE) Reactor System.


Parameters of Liquid Phase Epitaxy (LPE) Reactor System

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Liquid Phase Epitaxy (LPE) Reactor System

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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