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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of SiC coating,SiC Epitaxial Module,6-inch wafer epitaxial,semiconductor components,CVD SiC coating, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
SiC coating, In the increasingly competitive market, With sincere service high quality products and well-deserved reputation, we always supply customers support on solutions and techniques to achieve long-term cooperation. Living by quality, development by credit is our eternal pursuit, We firmly believe that after your visit we will become long-term partners.

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  • Graphite Powder

    Graphite Powder

    Semicorex Graphite Powder (99.999% purity, 1-5 µm particle size) is a high-performance material essential for semiconductor crystal growth, offering superior purity and stability. Semicorex ensures the highest quality standards, providing tailored solutions for advanced manufacturing.*
  • SiC Axle Sleeve

    SiC Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Fused Quartz Pedestal

    Fused Quartz Pedestal

    The Fused Quartz Pedestal, is specifically designed for use in Atomic Layer Deposition (ALD), Low-Pressure Chemical Vapor Deposition (LPCVD), and diffusion processes, ensuring uniform deposition of thin films on wafer surfaces.**
  • High-Purity Graphite Isostatic Graphite

    High-Purity Graphite Isostatic Graphite

    Semicorex provide high-purity graphite isostatic graphite with customized service, best choice in the semiconductor processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Guide Ring

    Tantalum Carbide Coating Guide Ring

    Semicorex Tantalum Carbide Coating Guide Ring is an advanced component specifically designed for the semiconductor industry, playing a crucial role in the growth of Silicon Carbide (SiC) crystals. This product is engineered to meet the stringent demands of high-temperature and high-stress environments inherent in semiconductor crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

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