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China SiC Coating Coated Graphite Substrate Manufacturers, Suppliers, Factory

"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for SiC Coating Coated Graphite Substrate,Etch Carrier(ICP/PSS),Wafer Handling,Compound Semiconductor Wafers,Silicon Carbide Processing Components, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
SiC Coating Coated Graphite Substrate, Our continual availability of high grade products in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. welcome new and old customers from all walks of life to contact us for future business relationships and mutual success!

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  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

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