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"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for SiC Coating Coated Graphite Substrate,Etch Carrier(ICP/PSS),Wafer Handling,Compound Semiconductor Wafers,Silicon Carbide Processing Components, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
SiC Coating Coated Graphite Substrate, Our continual availability of high grade products in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. welcome new and old customers from all walks of life to contact us for future business relationships and mutual success!

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  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

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