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  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • RTP RTA SiC Coated Carrier

    RTP RTA SiC Coated Carrier

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • MOCVD Susceptor for Epitaxial Growth

    MOCVD Susceptor for Epitaxial Growth

    Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • MOCVD is the key equipment

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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