Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*
Semicorex Upper Half Moon is a semi-circular wafer carrier meticulously engineered for epitaxial processing equipment. As a critical susceptor component in the epitaxial growth process, this part is designed to support and stabilize the silicon wafers during high-temperature chemical vapor deposition (CVD). Manufactured from high-purity graphite and protected with a uniform silicon carbide (SiC) coating, the Upper Half Moon combines mechanical robustness, excellent thermal conductivity, and exceptional corrosion resistance to meet the demands of high-precision epitaxy.
This product derives its name from its distinct half-moon geometry, which is purpose-built for specific rotational platforms in single-wafer or multi-wafer epitaxial reactors. Its unique shape not only facilitates uniform gas flow and thermal distribution but also allows easy integration into existing heating and rotation assemblies. The semi-circular design ensures optimal wafer positioning, minimizes thermal stress, and plays a key role in achieving uniform epitaxial film thickness across the entire wafer surface.
The Upper Half Moon product includes a substrate of ultra-fine graphite due to the combined performance benefits of a stable ultra-fine structure at extremely high temperatures coupled with resistance to failure over repeated runs. To extend use, a high purity dense SiC coating was applied by chemical vapor deposition technology, isolating the graphite substrate from HCl, Cl₂, silane, and other corrosive process gasses. Regardless, the SiC coating promotes a more durable and more extendable life to both the Upper Half Moon product and the parts in its totality while even decreasing contamination of the wafer environment, ultimately benefitting the process yield and film quality.
The surface finish of the SiC layer has been specified and is flat or smooth to promote constant heat transfer to a substrate and constant film formation. Moreover, the SiC coating improves component resistance to generation of particulates which is a key factor of defect sensitive semiconductor applications. Performance parameters including very low outgassing and very low deformation above 1200°C provides effective components for very long operation cycles, decreasing system downtime and maintenance costs.
Semicorex Upper Half Moon is second to none in respect to tolerances, coating uniformity, and material selection. We maintain strict quality control at every step, from the graphite machining, to the deposition of SiC coatings, and final inspection, ensuring every unit meets the rigorous standards required of semiconductor grade equipment. Furthermore, our experience in customizing geometries, thicknesses, and surface treatments is recognized to be applied to almost all forms of epitaxy platforms.
The Upper Half Moon is critically important for wafer stability, thermal uniformity, and contamination control for silicon or compound semiconductor epitaxy. Accordingly, Semicorex leverages unparalleled expertise, material technology, and manufacturing consistency to achieve customer expectations for reliable, high-performance susceptor components.