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Being a result of ours specialty and service consciousness, our corporation has won a very good status amid buyers all over the world for RTP/RTA SiC Coating,RTP/RTA Carrier,RTP/RTA,SiC Plate for RTA,RTA SiC coating, Sincerely stay up for serving you from the in the vicinity of future. You are sincerely welcome to go to our company to talk company face to face with each other and create long-term co-operation with us!
RTP/RTA SiC Coating, Our company adheres to the spirit of "lower costs, higher quality, and making more benefits for our clients". Employing talents from the same line and adhering to the principle of "honesty, good faith, real thing and sincerity", our company hopes to gain common development with clients from both at home and abroad!

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    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Silicon Epitaxy Susceptors

    Silicon Epitaxy Susceptors

    You can rest assured to buy Silicon Epitaxy Susceptors from our factory. Semicorex's Silicon Epitaxy Susceptor is a high-quality, high-purity product used in the semiconductor industry for epitaxial growth of the wafer chip. Our product has a superior coating technology that ensures the coating is present on all surfaces, preventing peeling off. The product is stable at high temperatures up to 1600°C, making it suitable for use in extreme environments.
  • Silicon Carbide Wafer Boat

    Silicon Carbide Wafer Boat

    Semicorex engineers semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. Our Silicon Carbide Wafer Boat has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • ZrO2 Crucible

    ZrO2 Crucible

    Semicorex ZrO2 Crucible is crafted from stabilized zirconia ceramic, presenting a standard composition of 94.7% zirconium dioxide (ZrO2) and 5.2% yttrium oxide (Y2O3) by weight percentage, or alternatively, 97% ZrO2 and 3% Y2O3 by mol percentage. This precise formulation endows the ZrO2 Crucible with a suite of advantageous characteristics that cater specifically to the demands of high-performance industrial processes.**
  • Related Blog
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  • What is CVD for SiC

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

    Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

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