SiC Epitaxial Module

Semicorex SiC Epitaxial Module, crafted from premium grade, SiC coated graphite, is a part of epitaxial equipment that is developed to withstand the most difficult elements of silicon carbide (SiC) epitaxy processes. This module, meant for high temperature in chemical vapor deposition (CVD) applications, is an important component in demonstrating stability and support for wafers during the epitaxial growth of high quality SiC. The Semicorex SiC Module is an effective base material for a reliable and repeatable production of epitaxial material consistent with quality SiC specifications.

The Semicorex SiC Module is a graphite substrate covered with a dense and uniform layer of silicon carbide plating and is resistant to particle contamination and corrosion even in the most severe process chemistries. The SiC coating prohibits contamination and erosion of the underlying graphite and provide substantial mechanical support and protection up to 1600°C. The SiC Module combines the strength and machinability of graphite with the overall wear, corrosion and chemical resistant properties of silicon carbide, making it the best suited of module in terms of durability in a harsh epitaxial atmosphere.

The module is designed to provide a uniform thermal profile while minimizing dimensional change throughout the thermal cycling process. This thermal uniformity and stability are essential to maintaining wafer flatness and epitaxy uniformity. If the wafer maintains a stable position with high thermal conductivity, then the thermal conditions across the wafer during processing will be uniform, which positively impacts yield, crystal quality, and downtime related to part failure or contamination.

The SiC Epitaxial Module is compatible with several epitaxial reactors including hot-wall and cold-wall and has the option to be customized to shape and dimensions to accommodate specific reactor layouts and customer needs. The SiC Epitaxial Module is well-suited for, but not limited to, 4-inch, 6-inch, and emerging 8-inch SiC epitaxy applications. Because of the high purity and optimized geometry of the SiC Epitaxial Module, physical interference is minimized in its impact on gas flow dynamics and thermal gradients which support more controlled growth of the epitaxial layer.

Semicorex’s SiC Epitaxial Modules represent the highest quality controlled piece in the eccentric assembly. In addition to the high quality control protocols, Semicorex utilizes the latest coating methods to apply uniform, dense, and low-outgassing SiC films. Semicorex has a long history of high performance ceramic coatings and graphite machining identifying process benefits that provide the best possible product life, consistency, and process stability from batch to batch.

In the fast-evolving field of SiC power devices, where material quality directly affects device performance, the epitaxial module is not just a consumable—it’s a critical enabler. The SiC coated graphite Epitaxial Module from Semicorex offers a robust, reliable solution for customers seeking to push the limits of efficiency, yield, and cost-effectiveness in SiC epitaxy.