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SiC Coated Barrel Susceptor for Wafer Epitaxial

SiC Coated Barrel Susceptor for Wafer Epitaxial

The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.

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Product Description

Looking for a graphite susceptor with exceptional heat distribution and thermal conductivity? Look no further than the Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial, coated with high-purity SiC for superior performance in epitaxial processes and other semiconductor manufacturing applications.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our SiC Coated Barrel Susceptor for Wafer Epitaxial has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.


Parameters of SiC Coated Barrel Susceptor for Wafer Epitaxial

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated Barrel Susceptor for Wafer Epitaxial

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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