The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
Looking for a graphite susceptor with exceptional heat distribution and thermal conductivity? Look no further than the Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial, coated with high-purity SiC for superior performance in epitaxial processes and other semiconductor manufacturing applications.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our SiC Coated Barrel Susceptor for Wafer Epitaxial has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Parameters of SiC Coated Barrel Susceptor for Wafer Epitaxial
Main Specifications of CVD-SIC Coating |
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SiC-CVD Properties |
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Crystal Structure |
FCC β phase |
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Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Features of SiC Coated Barrel Susceptor for Wafer Epitaxial
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.