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Silicon Carbide Graphite Substrate MOCVD Susceptor

Silicon Carbide Graphite Substrate MOCVD Susceptor

Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.

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Product Description

Our Silicon Carbide Graphite Substrate MOCVD Susceptor is highly pure, made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring the uniformity and consistency of the product. It is also highly corrosion-resistant, with a dense surface and fine particles, making it resistant to acid, alkali, salt, and organic reagents. Its high-temperature oxidation resistance ensures stability at high temperatures up to 1600°C.
Contact us today to learn more about our Silicon Carbide Graphite Substrate MOCVD Susceptor.


Parameters of Silicon Carbide Graphite Substrate MOCVD Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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