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China SiC Coating Substrate Manufacturers, Suppliers, Factory

"Control the standard by the details, show the toughness by quality". Our firm has strived to establish a highly efficient and stable workers workforce and explored an effective high-quality management system for SiC Coating Substrate,Silicon Carbide-Coated,SiC Graphite Supplies Susceptors,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy, We warmly welcome all intrigued customers to speak to us for additional information and facts.
SiC Coating Substrate, Ensuring high product quality by choosing the best suppliers, we have also implemented comprehensive quality control processes throughout our sourcing procedures. Meanwhile, our access to a large range of factories, coupled with our excellent management, also ensures that we can quickly fill your requirements at the best prices, regardless the order size.

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  • 4 Inch N-type SiC Substrate

    4 Inch N-type SiC Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Mechanical Seal Parts

    Mechanical Seal Parts

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Mechanical Seal Parts have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Ceramic Wafer Boat

    SiC Ceramic Wafer Boat

    Semicorex SiC Ceramic Wafer Boat has emerged as a critical enabling technology, providing an unwavering platform for high-temperature processing while safeguarding wafer integrity and ensuring the purity required for high-performance devices. It’s tailored to the semiconductor and photovoltaic industries that are built on precision. Every aspect of wafer processing, from deposition to diffusion, demands meticulous control and pristine environments. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Wafer Boat that fuses quality with cost-efficiency.**
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Graphite Heating Industrial Element

    Graphite Heating Industrial Element

    Semicorex graphite heating industrial element is one of the most important parts of high-temperature vacuum sintering furnaces. It's essential for a variety of thermal processes due to their sophisticated material qualities.
  • Related Blog
  • Reviews

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

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