SiC Coating Flat Part

Semicorex SiC Coating Flat Part is a high-performance SiC-coated graphite component specifically designed for the SiC epitaxy process. Its primary function is to facilitate uniform airflow conduction and ensure consistent gas distribution during the epitaxial growth stage, making it an indispensable component in SiC semiconductor manufacturing. Choosing Semicorex guarantees superior quality and precision-engineered solutions tailored to the semiconductor industry.

The SiC coating provides exceptional resistance to high temperatures, chemical corrosion, and thermal deformation, ensuring long-lasting performance in demanding environments. The graphite base enhances the component's structural integrity, while the uniform SiC coating ensures a high-purity surface critical for sensitive epitaxy processes. This combination of materials makes the SiC Coating Flat Part a reliable solution for achieving uniform epitaxial layers and optimizing overall production efficiency.

The excellent thermal conductivity and stability of graphite provide significant advantages as a component in epitaxial equipment. However, using pure graphite alone can lead to several issues. During the production process, corrosive gases and metal-organic residues can cause the graphite base to corrode and deteriorate, significantly reducing its service life. Additionally, any graphite powder that falls off can contaminate the chip, making it essential to address these problems during the preparation of the base.

Coating technology can effectively mitigate these issues by fixing surface powder, enhancing thermal conductivity, and balancing heat distribution. This technology is vital for ensuring the durability of the graphite base. Depending on the application environment and specific use requirements, the surface coating should possess the following characteristics:

1. High Density and Full Coverage: The graphite base operates in a high-temperature, corrosive environment and must be completely covered. The coating must be dense to provide effective protection.

2. Good Surface Flatness: The graphite base used for single crystal growth demands a very high surface flatness. Therefore, the coating process must maintain the original flatness of the base, ensuring that the coating surface is uniform.

3. Strong Bonding Strength: To improve the bond between the graphite base and the coating material, it is crucial to minimize the difference in thermal expansion coefficients. This enhancement ensures that the coating remains intact even after undergoing high and low-temperature thermal cycles.

4. High Thermal Conductivity: For optimal chip growth, the graphite base must provide rapid and uniform heat distribution. Consequently, the coating material should have high thermal conductivity.

5. High Melting Point and Resistance to Oxidation and Corrosion: The coating must be capable of functioning reliably in high-temperature and corrosive environments.

By focusing on these key characteristics, the longevity and performance of graphite-based components in epitaxial equipment can be significantly improved.

With advanced manufacturing techniques, Semicorex delivers customized designs to meet specific process requirements. The SiC Coating Flat Part is rigorously tested for dimensional accuracy and durability, reflecting Semicorexs commitment to excellence in semiconductor materials. Whether used in mass production or research settings, this component ensures precise control and high yield in SiC epitaxy applications.