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Silicon Carbide Epitaxy Susceptor
  • Silicon Carbide Epitaxy SusceptorSilicon Carbide Epitaxy Susceptor
  • Silicon Carbide Epitaxy SusceptorSilicon Carbide Epitaxy Susceptor
  • Silicon Carbide Epitaxy SusceptorSilicon Carbide Epitaxy Susceptor
  • Silicon Carbide Epitaxy SusceptorSilicon Carbide Epitaxy Susceptor
  • Silicon Carbide Epitaxy SusceptorSilicon Carbide Epitaxy Susceptor

Silicon Carbide Epitaxy Susceptor

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Product Description

Semicorex provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, such as Silicon Carbide Epitaxy Susceptor, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer. The SIC formed is firmly bonded to the graphite base, giving the graphite base special properties, thus making the surface of the graphite compact, Porosity-free, high temperature resistance, corrosion resistance and oxidation resistance.
Our Silicon Carbide Epitaxy Susceptor is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Silicon Carbide Epitaxy Susceptor.


Parameters of Silicon Carbide Epitaxy Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Silicon Carbide Epitaxy Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.




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