China RTP/RTA SiC Coating Carrier Manufacturers, Suppliers, Factory

This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

Semiconductors are materials whose electrical conductivity at room temperature lies between that of insulators and conductors. By introducing impurities, a process known as doping, these materials can become conductors.

Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.