SiC-coated Graphite Crucibles

Installed at the center of high temperature crystal growth furnaces, SiC-coated graphite crucibles work in conjunction with heaters, thermal insulation sleeves, flow guide tubes, and crucible shafts to form the complete thermal field system. This thermal field system can maintain a stable high-temperature environment essential for crystal growth.

The production of SiC-coated graphite crucibles usually begins with the use of the advanced chemical vapor deposition technology to uniformly deposit a dense silicon carbide coating on the surface of the formed graphite substrate. Composed of the high-purity graphite substrate and the dense silicon carbide coating, SiC-coated graphite crucible forms a synergistic structure that combines the thermal conductivity of graphite with the corrosion resistance of silicon carbide.

The Czochralski method is the universal industrial technique for crystal growth. This technique will exert the centrifugal force on the crucible during the crystal production. The superior flexural strength and toughness of SiC-coated graphite crucibles can prevent breakage or cracking during high-speed rotation, effectively reducing production interruptions caused by crucible damage. Additionally, crucibles need to undergo drastic temperature fluctuations within a short period of time during this process. Thanks for their remarkable thermal shock resistance, SiC-coated graphite crucibles can reduce structural damage related to thermal stress, ensure the stability of their shape, thereby lowering crystal growth defects caused by crucible deformation.

Under high temperatures, SiC-coated graphite crucibles will form a dense protective layer of silicon carbide. This protective layer can isolate the graphite substrate from silicon vapor and molten silicon, thereby minimizing graphite substrate corrosion and crystal contamination risks associated with coating peeling. Therefore, Semicorex's SiC-coated graphite crucibles can withstand various complex high-temperature corrosion environments for extended periods in actual operation. This ensures consistent crystal composition and reduces defect rates, both of which are essential for the production of high quality semiconductor crystals.