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    The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • TaC Coated Crucible

    TaC Coated Crucible

    Introducing the CVD Tac coated crucible, the perfect solution for semiconductor equipment manufacturers and users who demand the highest level of quality and performance. Our crucibles are coated with a state-of-the-art CVD Tac (tantalum carbide) layer, which provides superior resistance to corrosion and wear, making them ideal for use in a variety of semiconductor applications.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • SiC Coating Ring

    SiC Coating Ring

    Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
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  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • Isostatic Graphite Production Technology

    Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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