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We normally believe that one's character decides products' quality, the details decides products' high-quality ,while using the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for SiC Coating Susceptor,Coated Silicon Carbide Susceptor,Silicon Carbide Coated Deposition Susceptor,SiC Coating Semiconductor,Coated Silicon Carbide Chamber, We have now confident that we can easily offer the premium quality products and solutions at resonable price, good after-sales services into the buyers. And we're going to produce a dazzling future.
SiC Coating Susceptor, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective products and meticulous after-sales service. We firmly believe that: we are outstanding as we are specialized.

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  • Graphite Heating Elements

    Graphite Heating Elements

    Semicorex Graphite Heating Elements have become essential components in semiconductor manufacturing, enabling the precise and controlled thermal environments required for advanced wafer processing. Their unique combination of material properties, design flexibility, and performance advantages makes them ideal for meeting the stringent demands of next-generation semiconductor device fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heating Elements that fuse quality with cost-efficiency.**
  • Durable Focus Rings for Semiconductor Processing

    Durable Focus Rings for Semiconductor Processing

    Semicorex durable focus rings for semiconductor processing are designed to withstand the extreme environments of plasma etch chambers used in semiconductor processing. Our focus rings are made of high-purity graphite coated with a dense, wear-resistant silicon carbide (SiC) coating. The SiC coating has high corrosion and heat resistance properties, as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process to improve the service life of our focus rings.
  • Wafer Cassette

    Wafer Cassette

    Semicorex wafer cassette made of PFA (Perfluoroalkoxy) is specifically designed for use in semiconductor processes. PFA is a high-performance fluoropolymer known for its excellent chemical resistance, thermal stability, and low particle generation characteristics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • RTP SiC Coating Plates

    RTP SiC Coating Plates

    Semicorex RTP SiC Coating Plates are high-performance wafer carriers engineered for use in demanding Rapid Thermal Processing environments. Trusted by leading semiconductor manufacturers, Semicorex delivers superior thermal stability, durability, and contamination control backed by rigorous quality standards and precision manufacturing.*
  • Silicon Carbide Flat Membrane

    Silicon Carbide Flat Membrane

    Semicorex Silicon Carbide Flat Membrane is a high-performance ceramic filtration solution renowned for its exceptional chemical resistance, thermal stability, and superior filtration efficiency. Choosing Semicorex means opting for industry-leading technology backed by cutting-edge manufacturing processes and a commitment to delivering reliable, cost-effective solutions that meet the toughest filtration challenges.*
  • ICP Plasma Etching System

    ICP Plasma Etching System

    Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
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  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • GaN Market Changes

    Silicon carbide (SiC) is currently facing challenges in the "price war," while gallium nitride (GaN) is emerging as a key player in the next technological battlefield.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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