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China SiC Coating Susceptor Manufacturers, Suppliers, Factory

We normally believe that one's character decides products' quality, the details decides products' high-quality ,while using the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for SiC Coating Susceptor,Coated Silicon Carbide Susceptor,Silicon Carbide Coated Deposition Susceptor,SiC Coating Semiconductor,Coated Silicon Carbide Chamber, We have now confident that we can easily offer the premium quality products and solutions at resonable price, good after-sales services into the buyers. And we're going to produce a dazzling future.
SiC Coating Susceptor, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective products and meticulous after-sales service. We firmly believe that: we are outstanding as we are specialized.

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  • CVD SiC Coated Graphite Susceptor

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    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

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    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

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