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SiC ceramic, Our company has a skillful sales team, strong economic foundation, great technical force, advanced equipment, complete testing means, and excellent after-sales services. Our goods have beautiful appearance, fine workmanship and superior quality and win the unanimous approvals of the customers all over the world.

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  • ICP Plasma Etching System

    ICP Plasma Etching System

    Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites is a new type of thermal structure/functional integration material that combines the advantages of metal, ceramic and carbon materials, and has the characteristics of high-temperature resistance, low density, high strength ratio, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, and no catastrophic damage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Sand

    Quartz Sand

    Semicorex is a leading provider of ultra-high purity quartz sand, offering products with ≥99.995% SiO2 content. Our quartz sand stands out for its exceptional purity, ultra-low alkali metal content, and customizable aluminum content.**
  • PAN based Carbon Felt

    PAN based Carbon Felt

    Semicorex PAN Based Carbon Felt is a lightweight, high-performance insulation material designed for high-temperature environments. Choose Semicorex for our expertise in delivering customized, reliable solutions that enhance the efficiency and longevity of your industrial processes.*
  • Graphite Top Plates

    Graphite Top Plates

    Semicorex Graphite Top Plates are precision-engineered fixtures designed for secure and reliable handling of hot glass bottles in high-temperature manufacturing environments. Choose Semicorex for unmatched material quality, custom machining capabilities, and consistent performance trusted by leading glass producers worldwide.*
  • PBN Heater

    PBN Heater

    Semicorex PBN Heater offers ultra-clean, high-temperature performance ideal for semiconductor, crystal growth, and vacuum applications. Choose Semicorex for unmatched material purity, engineering precision, and reliable delivery trusted by leading global manufacturers.*
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • How Does TaC Coating Protect Graphite Components In Semiconductors

    That's where the game-changing innovation of TaC Coating enters the picture, and why our advanced solutions at Semicorex are engineered to directly address your most persistent production pain points. Graphite is fantastic for its thermal properties, but without a robust shield, it simply cannot withstand the aggressive conditions inside many process chambers.

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