China SiC ceramic Manufacturers, Suppliers, Factory

Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.

Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex TaC Coating Upper Halfmoon is a specialized component engineered for high-performance epitaxial processes in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex SiC Coated Waferholder is a high-performance component designed for the precise placement and handling of SiC wafers during epitaxy processes. Choose Semicorex for its commitment to delivering advanced, reliable materials that enhance the efficiency and quality of semiconductor manufacturing.*

Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.