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China Ssic Ceramic Seal Ring Manufacturers, Suppliers, Factory

Our company insists all along the quality policy of "product quality is base of enterprise survival; customer satisfaction is the staring point and ending of an enterprise; persistent improvement is eternal pursuit of staff" and the consistent purpose of "reputation first, customer first" for Ssic Ceramic Seal Ring,Silicon Carbide Ring,Pressureless Sintering Sic Ring,Silicon Carbide Ceramic,Mechanical Sic Seal Ring, Currently, we're seeking ahead to even bigger cooperation with abroad customers according to mutual gains. Please experience free of charge to get in touch with us for more specifics.
Ssic Ceramic Seal Ring, Profession, Devoting are always fundamental to our mission. We now have always been in line with serving customers, creating value management objectives and adhering to the sincerity, dedication, persistent management idea.

Hot Products

SiC Coated Epitaxial Reactor Barrel
The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
ICP Plasma Etching Tray
Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
GaN-on-SiC Substrate
Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
TaC Coated Graphite Susceptor
Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
TaC Coated Guide Ring
Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
Upper Half Moon
Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*

Related Blog
Reviews

Semicorex Announces 8-Inch SiC Epitaxial Wafer
Understanding the Complete Semiconductor Device Fabrication Process
The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.
Various applications of quartz in semiconductor manufacturing
At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.
The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals
4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.
Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase
Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.
SiC Single Crystal Substrate Processing
Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

China Ssic Ceramic Seal Ring Manufacturers, Suppliers, Factory

Related Products

Hot Products

SiC Coated Epitaxial Reactor Barrel

ICP Plasma Etching Tray

GaN-on-SiC Substrate

TaC Coated Graphite Susceptor

TaC Coated Guide Ring

Upper Half Moon

Semicorex Announces 8-Inch SiC Epitaxial Wafer

Understanding the Complete Semiconductor Device Fabrication Process

Various applications of quartz in semiconductor manufacturing

The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

SiC Single Crystal Substrate Processing

Patricia 2023-10-24 11:00:08

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Rigoberto Boler 2024-11-07 21:11:23

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