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China Sic Ceramic Element Manufacturers, Suppliers, Factory

To be able to ideal meet up with client's needs, all of our operations are strictly performed in line with our motto "High High-quality, Competitive Cost, Fast Service" for Sic Ceramic Element,MOCVD Ceiling Plate,MOCVD Chamber Lids,MOCVD Cover Plate,Silicon Carbide Ceramic Lid, We play a leading role in giving buyers with high-quality goods fantastic provider and competitive selling prices.
Sic Ceramic Element, After years' creating and developing, with the advantages of trained qualified talents and rich marketing experience, outstanding achievements were gradually made. We get good reputation from the customers due to our good solutions quality and fine after-sale service. We sincerely wish to create a more prosperous and flourishing future together with all the friends home and abroad!

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  • SiC Gasket

    SiC Gasket

    Semicorex prioritizes quality and performance, ensuring that each SiC Gasket meets stringent industry standards. Our cutting-edge manufacturing processes guarantee that our products deliver consistent and reliable results, positioning Semicorex as a leader in the field of advanced ceramics.
  • Susceptor Plate

    Susceptor Plate

    Semicorex Susceptor Plate is a crucial component in the epitaxial growth process, specifically designed to carry semiconductor wafers during the deposition of thin films or layers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Aluminum Nitride Substrates

    Aluminum Nitride Substrates

    Semicorex Aluminum nitride substrates provide an advanced solution for high-performance RF filter applications, offering superior piezoelectric properties, high thermal conductivity, and excellent stability. Choosing Semicorex ensures access to internationally recognized quality, cutting-edge technology, and scalable manufacturing capabilities, making it the ideal partner for 5G and next-generation electronic components.*
  • SiC Epi Wafers

    SiC Epi Wafers

    Semicorex SiC epi wafers are becoming a key material for promoting technological innovation in high-frequency, high-temperature, and high-power application scenarios due to their excellent physical properties. Semicorex SiC Epi Wafers use industry-leading epitaxial growth technology and are designed to meet the high-end needs of new energy vehicles, 5G communications, renewable energy, and industrial power supplies, providing customers with high-performance, high-reliability core semiconductor solutions.*
  • Quartz 12 inch Outer Tube

    Quartz 12 inch Outer Tube

    Semicorex Quartz 12 Inch Outer Tube is a specialized component meticulously designed for use in the semiconductor industry, where precision, reliability, and high performance are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • 4

    4" 6" 8" N-type SiC Ingot

    Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

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