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We hold strengthening and perfecting our items and repair. At the same time, we get the job done actively to do research and progress for LPE,tantalum carbon,TaC,epitaxial growth,tantalum carbide coating, We are going to do our greatest to satisfy or exceed customers' prerequisites with excellent goods, advanced concept, and economical and timely company. We welcome all clients.
LPE, We focus on providing service for our clients as a key element in strengthening our long-term relationships. Our continual availability of high grade solutions in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. We have been willing to cooperate with business friends from at home and abroad and create a great future together.

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  • Semiconductor Wafer Boat for Vertical Furnaces

    Semiconductor Wafer Boat for Vertical Furnaces

    Semicorex semiconductor wafer boat for vertical furnaces is a specialized tool used in the manufacturing process of semiconductor devices. It is designed to hold and transport silicon wafers during the various stages of wafer processing in a vertical furnace. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC-coated Halfmoon

    TaC-coated Halfmoon

    Semicorex TaC-coated Halfmoon offers compelling advantages in the epitaxial growth of silicon carbide (SiC) for power electronics and RF applications. This material combination addresses critical challenges in SiC epitaxy, enabling higher wafer quality, improved process efficiency, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Halfmoon that fuses quality with cost-efficiency.**
  • Graphite Heating Elements

    Graphite Heating Elements

    Semicorex Graphite Heating Elements have become essential components in semiconductor manufacturing, enabling the precise and controlled thermal environments required for advanced wafer processing. Their unique combination of material properties, design flexibility, and performance advantages makes them ideal for meeting the stringent demands of next-generation semiconductor device fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heating Elements that fuse quality with cost-efficiency.**
  • SiC Coated Wafer Susceptors

    SiC Coated Wafer Susceptors

    Semicorex SiC Coated Wafer Susceptors are high-performance carrier designed specifically for ultrathin film deposition under pressureless conditions. With advanced materials engineering, precision porosity control, and robust SiC coating technology, Semicorex delivers industry-leading reliability and customization to meet the evolving needs of next-generation semiconductor manufacturing.*
  • Alumina Mounting Base Plates

    Alumina Mounting Base Plates

    Semicorex Alumina Mounting Base Plates are high-performance ceramic component designed for precise wafer handling in semiconductor manufacturing. Its superior strength, insulation, and thermal stability make it ideal for demanding cleanroom automation environments.*
  • Silicon Nitride Plates

    Silicon Nitride Plates

    Semicorex Silicon nitride plates are high-strength ceramic substrates designed to deliver exceptional thermal performance and mechanical reliability for advanced power modules. Choosing Semicorex means benefiting from precision manufacturing, strict quality control, and materials engineering expertise that ensure consistent performance even in the most demanding applications.*
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  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

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