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Silicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor

Silicon Carbide SiC Coated Barrel Susceptor

Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex Silicon Carbide SiC Coated Barrel Susceptor is a graphite product coated with high purified SiC, which has high heat and corrosion resistance. It is suitable for LPE. The Silicon Carbide SiC Coated Barrel Susceptor used in processes that form the epixial layer on semiconductor wafers, which has a high thermal conductivity, and excellent heat distribution properties.

Contact us today to learn more about our Silicon Carbide SiC Coated Barrel Susceptor.


Parameters of Silicon Carbide SiC Coated Barrel Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Silicon Carbide SiC Coated Barrel Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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