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  • Plasma Processing Focus Ring

    Plasma Processing Focus Ring

    Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • Graphite Susceptor with SiC Coating

    Graphite Susceptor with SiC Coating

    Semicorex Graphite Susceptor with SiC Coating is an essential component designed for silicon epitaxy processes in Applied Materials and LPE (Liquid Phase Epitaxy) units. Crafted from high-quality graphite material coated with Silicon Carbide (SiC), this susceptor ensures superior performance and longevity in semiconductor manufacturing environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Heater

    Graphite Heater

    Semicorex Graphite Heater is an advanced heating component made from high-purity isostatic graphite, designed for use in monocrystalline silicon (Si) crystal growth applications. As an essential part of semiconductor manufacturing, this product provides precise, uniform heating necessary for high-quality Si crystal production. Through its specialized design and high-performance material, it ensures optimal conditions for crystal growth, significantly enhancing the efficiency and consistency of the process.*
  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
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  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • What is a Dummy Wafer?

    In the semiconductor manufacturing process, wafers form the foundation of chip production. Among these, a special type of wafer, referred to as the Dummy Wafer, plays a pivotal role in ensuring equipment stability and controlling production costs.

  • Discussing CVD furnace

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

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