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China LPE parts Manufacturers, Suppliers, Factory

Our enterprise since its inception, constantly regards product good quality as organization life, constantly improve production technology, strengthen merchandise high quality and continuously strengthen enterprise total good quality administration, in strict accordance with all the national standard ISO 9001:2000 for LPE parts,SiC coating,SiC coated,CVD SiC coating,Epitaxial Growth, "Quality first, Price lowest, Service best" is the spirit of our company. We sincerely welcome you to visit our company and negotiate mutual business!
LPE parts, So far our merchandise have been exported to east Europe, the Middle East, Southeast, Africa and South America etc. We've 13years expert sales and purchase in Isuzu parts at home and abroad and the ownership of the modernized electronic Isuzu parts checking systems. We honor our core principal of Honesty in business, priority in service and will do our best to provide our customers with high quality goods and excellent service.

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    Semicorex Etching Wafer Carrier with CVD SiC Coating is an advanced, high-performance solution tailored for demanding semiconductor etching applications. Its superior thermal stability, chemical resistance, and mechanical durability make it an essential component in modern wafer fabrication, ensuring high efficiency, reliability, and cost-effectiveness for semiconductor manufacturers worldwide.*
  • Sapphire Crystal Growth Heater

    Sapphire Crystal Growth Heater

    Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
  • Graphite Ion Implanter

    Graphite Ion Implanter

    Semicorex Graphite Ion Implanter stands as a critical component in the realm of semiconductor manufacturing, distinguished by its fine particle composition, excellent conductivity, and resilience to extreme conditions.
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • LNOI Wafer

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    Semicorex LNOI Wafer: High-performance Lithium Niobate on Insulator wafers with customizable substrates for advanced photonics and RF applications. With precision engineering, customizable options, and superior material quality, Semicorex ensures high-performance LNOI wafers tailored to your application needs.*
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  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

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    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

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