TaC Coating Half-moon Part

TaC ceramics have a melting point of up to 3880°C, high hardness (Mohs hardness 9-10), large thermal conductivity (22W·m-1·K−1), large bending strength (340-400MPa), and small thermal expansion coefficient (6.6×10−6K−1). They also exhibit excellent thermochemical stability and excellent physical properties, and have good chemical and mechanical compatibility with graphite and C/C composites. Therefore, TaC coatings are widely used in aerospace thermal protection, single crystal growth, energy electronics, and medical devices.

TaC-coated graphite has better chemical corrosion resistance than bare graphite or SiC-coated graphite, can be used stably at high temperatures of 2600°, and does not react with many metal elements. It is the best coating in the third-generation semiconductor single crystal growth and wafer etching scenarios, and can significantly improve the control of temperature and impurities in the process, and prepare high-quality silicon carbide wafers and related epitaxial wafers. It is especially suitable for growing GaN or AlN single crystals with MOCVD equipment and growing SiC single crystals with PVT equipment. The quality of the grown single crystals is significantly improved.

This product is an ideal solution for manufacturers prioritizing precision, efficiency, and durability in their epitaxy processes. Trust Semicorex for high-performance solutions designed to meet the evolving needs of the semiconductor industry.