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  • Silicon Carbide Coating Graphite Susceptor for MOCVD

    Silicon Carbide Coating Graphite Susceptor for MOCVD

    Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Wafer Carrier Tray

    Wafer Carrier Tray

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Porous Graphite Crucible

    Porous Graphite Crucible

    Semicorex provide high-quality porous graphite crucible with customized service, our porous graphite material is top-notch quality with high specifications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Zirconia ZrO2 Robot Arm

    Zirconia ZrO2 Robot Arm

    Semicorex Zirconia ZrO2 Robot Arm, a vital component in semiconductor processing for seamless wafer transfer and handling. Crafted to endure the rigorous demands of high-temperature, corrosive, and abrasive environments, this ceramic arm boasts unparalleled durability and reliability. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Wafer

    Silicon Wafer

    Semicorex silicon wafer is a thin, circular slice of silicon crystal used in the fabrication of integrated circuits and other microdevices. Typically, these wafers are produced through a meticulous process involving growing a single crystal ingot of high-purity silicon and then precisely slicing it into thin discs. Silicon wafers serve as the fundamental substrate upon which semiconductor devices are built. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Slide Plate

    Graphite Slide Plate

    Semicorex's graphite slide plate has self-lubricating capabilities, which can effectively reduce mechanical running resistance, improve operational efficiency, and minimize mechanical failures caused by insufficient or failed lubrication.
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  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

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