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We always continually provide you with the most conscientious customer service, and the widest variety of designs and styles with finest materials. These efforts include the availability of customized designs with speed and dispatch for Tantalum Carbide coating,Tantalum Carbide,TaC Coatings,guide ring,SiC crystal growth, We'll do our greatest to fulfill your specifications and are sincerely searching ahead to developing mutual helpful small business marriage with you!
Tantalum Carbide coating, We will continue to devote ourselves to market & product development and build a well-knit service to our customer to create a more prosperous future. Make sure you contact us today to find out how we can work together.

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    Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
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  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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