English
Home > Products > SiC-Coated LPE Crystal Growth Susceptor

China SiC-Coated LPE Crystal Growth Susceptor Manufacturers, Suppliers, Factory

Adhering towards the theory of "quality, support, efficiency and growth", we've attained trusts and praises from domestic and international client for SiC-Coated LPE Crystal Growth Susceptor,LPE With SiC Coating,Silicon Carbide SiC Coated for LPE,Durable SiC-Coated for LPE,SiC Coated for LPE, We are expecting to cooperate with you on the basis of mutual benefits and common development. We will never disappoint you.
SiC-Coated LPE Crystal Growth Susceptor, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to provide our customers more profit, and looking forward to more chance to make business.

Related Products

Hot Products

  • Silicon Carbide-Coated Graphite Barrel

    Silicon Carbide-Coated Graphite Barrel

    The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • SiC Reflector

    SiC Reflector

    Semicorex SiC reflector is a pivotal element in various semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Alumina End Effector

    Alumina End Effector

    Semicorex Alumina End Effector has emerged as an indispensable tool in the demanding realm of semiconductor manufacturing, where even microscopic imperfections can compromise device performance, the role of precision wafer handling cannot be overstated. The Alumina End Effector provides a unique combination of precision, purity, and durability essential for manipulating delicate silicon wafers throughout various fabrication processes.**
  • Fused Quartz Ring

    Fused Quartz Ring

    The Fused Quartz Ring from Semicorex is a critical component designed specifically for the semiconductor etching process with exceptional purity, thermal stability, and chemical resistance. **
  • TaC Coated Planetary Plate

    TaC Coated Planetary Plate

    Semicorex TaC Coated Planetary Plate is a high-precision component designed for MOCVD epitaxial growth, featuring planetary motion with multiple wafer pockets and optimized gas flow control. Choosing Semicorex means accessing advanced coating technology and engineering expertise that deliver exceptional durability, purity, and process stability for the semiconductor industry.*
  • Related Blog
  • Reviews

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • What is SiC coated graphite susceptor?

    In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • GaN Single Crystal

    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept