English
Home > Products > Barrel Susceptors for LPE

China Barrel Susceptors for LPE Manufacturers, Suppliers, Factory

We take "customer-friendly, quality-oriented, integrative, innovative" as objectives. "Truth and honesty" is our management ideal for Barrel Susceptors for LPE,LPE Susceptor,LPE Susceptor Wafer,Polygonal Susceptor,Epi Wafer, Make sure you you should not hesitate to call us should you be fascinated in our products. We firmly imagine our merchandise will make you pleased.
Barrel Susceptors for LPE, Our product quality is one of the major concerns and has been produced to meet the customer's standards. "Customer services and relationship" is another important area which we understand good communication and relationships with our customers is the most significant power to run it as a long term business.

Related Products

Hot Products

  • SiC Membrane

    SiC Membrane

    Semicorex SiC Membrane is a high-performance ceramic filtration solution made from high-purity silicon carbide, designed for challenging industrial filtration applications. Choose Semicorex for reliable, durable, and efficient SiC membranes that deliver exceptional performance and long-term value in even the most demanding environments.*
  • MOCVD Satellite Holder Plate

    MOCVD Satellite Holder Plate

    Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.
  • High-Purity Flexible Graphite Foil

    High-Purity Flexible Graphite Foil

    Semicorex high-purity flexible graphite foil is a versatile and high-performance material that can withstand extreme temperatures and challenging processes. Its ultra-high purity grades and unique properties make it an ideal solution for a wide range of high-temperature applications. We provide custom high-purity flexible graphite foil which has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • High-purity Carbon Powder

    High-purity Carbon Powder

    Semicorex High-purity Carbon Powder serves as a crucial precursor in the synthesis of high-purity silicon carbide (SiC) powder and other solid-state carbide materials. It ensures the purity and quality required for advanced applications in the semiconductor, electronics, and ceramics industries. We at Semicorex are dedicated to manufacturing and supplying high-performance High-purity Carbon Powder that fuse quality with cost-efficiency.**
  • TaC Coating Upper Halfmoon

    TaC Coating Upper Halfmoon

    Semicorex TaC Coating Upper Halfmoon is a specialized component engineered for high-performance epitaxial processes in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Mechanical Seal Parts

    Mechanical Seal Parts

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Mechanical Seal Parts have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept