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Our well-equipped facilities and exceptional top quality handle throughout all stages of production enables us to guarantee total client fulfillment for LPE Epitaxy,CVD TaC coating,focus ring,guide ring,porous graphiegraphie susceptor, We warmly welcome customers, business associations and friends from all over the world to contact us and seek cooperation for mutual benefits.
LPE Epitaxy, With the effort to keep pace with world's trend, we will always endeavor to meet customers' demands. If you want develop any other new solutions, we can customize them for you personally. If you feel interest in any of our products or want develop new merchandise, remember to feel free to contact us. We have been looking forward to forming successful business relationship with customers all over the world.

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  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • 8-inch Quartz Thermos Bucket

    8-inch Quartz Thermos Bucket

    Semicorex 8-inch Quartz Thermos Bucket, a pinnacle of precision engineering tailored specifically for the semiconductor industry. Designed to safeguard and maintain the integrity of 8-inch wafers during transport and storage, this 8-inch Quartz thermos bucket combines cutting-edge materials with meticulous craftsmanship to meet the stringent demands of modern semiconductor fabrication facilities. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Part

    Tantalum Carbide Part

    Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
  • Alumina Robot Arm

    Alumina Robot Arm

    Semicorex Alumina Robot Arm is a high-performance ceramic component designed for precise wafer handling in semiconductor manufacturing. Its superior strength, insulation, and thermal stability make it ideal for demanding cleanroom automation environments.*
  • SiC Mirrors

    SiC Mirrors

    Semicorex SiC Mirrors are high-performance silicon carbide optical components engineered for extreme precision in applications such as optic scan systems, lithography, and space-based telescopes. Choose Semicorex for our advanced manufacturing expertise, customizable designs, and exceptional surface finishing that ensure unmatched stability, reflectivity, and reliability in the most demanding environments.*
  • SiC coated graphite tray

    SiC coated graphite tray

    SiC coated graphite tray is a cutting-edge semiconductor part that gives Si substrates precise temperature control and stable support during the silicon epitaxial growth process. Semicorex always give top priority to customer demand, providing customers with core component solutions required for the production of high-quality semiconductors.
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • What is a Dummy Wafer?

    In the semiconductor manufacturing process, wafers form the foundation of chip production. Among these, a special type of wafer, referred to as the Dummy Wafer, plays a pivotal role in ensuring equipment stability and controlling production costs.

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