English
Home > Products > Silicon carbide ceramic

China Silicon carbide ceramic Manufacturers, Suppliers, Factory

Being supported by an highly developed and specialist IT team, we could give technical support on pre-sales & after-sales service for Silicon carbide ceramic,Silicon carbide membranes,SiC membrane,SiC ceramic membrane,SiC ceramic, Let's cooperate hand in hand to jointly make a beautiful upcoming. We sincerely welcome you to pay a visit to our company or speak to us for cooperation!
Silicon carbide ceramic, we've been sincerely hope to establish one good long term business relationship with your esteemed company thought this opportunity, based on equal, mutual beneficial and win win business from now till the future.

Related Products

Hot Products

  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • TaC Coated Crucible

    TaC Coated Crucible

    Introducing the CVD Tac coated crucible, the perfect solution for semiconductor equipment manufacturers and users who demand the highest level of quality and performance. Our crucibles are coated with a state-of-the-art CVD Tac (tantalum carbide) layer, which provides superior resistance to corrosion and wear, making them ideal for use in a variety of semiconductor applications.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

Related Search

heat transfer plate;vapor chamber heatsink;vapor chamber;silicon carbide ceramic;;RBSiC;SSiC;SiC ceramic;SiC Plate;RSiCSemiconductor Vacuum Chuck;Silicon Carbide Ceramic;SiC part;wafer chuck;semiconductor component;High-Performance Wafer Chuck For Vacuum Systems;RBSiC;SSiC;Silicon Carbide Epitaxial;SiCsic ceramic;cvd silicon carbide;RBSiC;SSiC;silicon carbide ceramic coating;;silicon carbide tubes;diffusion process;wafer processing;solar cell manufacturingSiC ceramic;high purity SiC;Silicon carbide;SiC spare part;silicon carbide ceramic;RBSiC;SSiC;RSiC;wafer processing;SiC for semiconductorSilicon Carbide CeramicSilicon Carbide Ceramic Bushingsilicon carbide ceramic coatingSilicon Carbide Ceramic Grinding BarrelSilicon Carbide Ceramic LidSilicon Carbide Ceramic MembraneSilicon Carbide Ceramic PlateSilicon carbide ceramic platessilicon carbide ceramic robotic armSilicon Carbide Ceramic SealSilicon Carbide Ceramic SealsSilicon carbide ceramic setter plateSilicon Carbide Ceramic ShaftSilicon Carbide Ceramic Shaft For Magnetic Drive PumpSilicon Carbide Ceramic Tubessilicon carbide ceramicsSintered Silicon Carbide Ceramic

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept