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  • Silicon Epitaxial Deposition In Barrel Reactor

    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • MOCVD Cover Star Disc Plate for Wafer Epitaxy

    MOCVD Cover Star Disc Plate for Wafer Epitaxy

    Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • RTP SiC Coating Plates

    RTP SiC Coating Plates

    Semicorex RTP SiC Coating Plates are high-performance wafer carriers engineered for use in demanding Rapid Thermal Processing environments. Trusted by leading semiconductor manufacturers, Semicorex delivers superior thermal stability, durability, and contamination control backed by rigorous quality standards and precision manufacturing.*
  • Alumina Ceramic Arm

    Alumina Ceramic Arm

    Semicorex Alumina Ceramic Arm is a high-purity robotic component designed for precise and contamination-free wafer handling in semiconductor manufacturing. Choosing Semicorex ensures not only advanced alumina ceramic material quality but also precision craftsmanship that guarantees durability, cleanliness, and reliability in critical process environments.*
  • Related Blog
  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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