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silicon carbide ceramic, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to give our customers more profit, and looking forward to more chance to make business.

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  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • RTP Graphite Carrier Plate

    RTP Graphite Carrier Plate

    Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
  • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
  • TaC Coating Chuck

    TaC Coating Chuck

    Semicorex TaC Coating Chuck, the cutting-edge vacuum chuck equipped with TaC coatings, specifically designed for semiconductor furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Reviews

  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

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