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China Silicon Carbide Ceramic Manufacturers, Suppliers, Factory

As a way to present you with ease and enlarge our enterprise, we also have inspectors in QC Workforce and assure you our greatest support and solution for Silicon Carbide Ceramic,Silicon Carbide Plate,SiSiC,SIC,Icp etching equipment, Our main objectives are to deliver our clients worldwide with good quality, competitive cost, happy delivery and superb providers.
Silicon Carbide Ceramic, We are eager to cooperate with foreign companies which care much on the real quality, stable supply, strong capability and good service. We can offer the most competitive price with high quality,because we are much MORE PROFESSIONAL. You are welcomed to visit our company at any time.

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  • SiC Process Tube

    SiC Process Tube

    SiC Process Tube is a tube shape reactor in heat treatment for wafer processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Cantilever Paddle

    SiC Cantilever Paddle

    Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Powder

    SiC Powder

    Semicorex SiC Powder, also known as silicon carbide powder, is a finely ground material predominantly composed of N-type α-phase silicon carbide. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Focus Ring

    CVD SiC Focus Ring

    Through a process of chemical vapor deposition (CVD), Semicorex CVD SiC Focus Ring is meticulously deposited and mechanically processed to achieve the final product. With its superior material properties, it's indispensable in the demanding environments of modern semiconductor fabrication.**
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Semicorex SiC Cantilever Paddles are high-performance silicon carbide cantilever paddles used in semiconductor thermal processing equipment, designed for stable wafer handling in high-temperature environments. Choosing Semicorex means choosing high-purity materials, excellent thermal stability and industry-leading precision manufacturing technology to ensure that every critical process of yours is stable and reliable.*
  • Quartz Crucible for Silicon Single Crystal Pulling

    Quartz Crucible for Silicon Single Crystal Pulling

    Semicorex Quartz Crucible for Silicon Single Crystal Pulling is made of high-quality fused quartz, the crucible has multiple layers, the inner layer is extremely high quality and dense to ensure the quality of single crystal. Semicorex is professional for the Quartz Crucible for Silicon Single Crystal Pulling products with extensive experience.*
  • Related Blog
  • Reviews

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • Various applications of quartz in semiconductor manufacturing

    At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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