SiC wafer Grinding Plate

SiC wafer grinding plate is a crucial part of semiconductor wafer surface processing. Leveraging the precise formulation of silicon carbide micro-powder and cutting-edge pressureless sintering process, the SiC wafer grinding plate delivers efficient grinding and precision finishing on wafer surfaces, fundamentally safeguarding the stability and yield of subsequent semiconductor manufacturing procedures.

With precise and efficient wafer surface finishing as its core function, SiC wafer grinding plate achieves stable and controllable friction with the wafer surface. When combined with grinding or polishing fluids of specific proportions, it works synergistically to eliminate various surface defects caused by pre-processes, such as chipping, microcracks and edge burrs. It can also achieve micron-level precise control over wafer thickness and total thickness variation (TTV), thereby providing a high-quality wafer substrate with excellent surface quality and stable dimensional parameters for subsequent key processes in chip manufacturing such as photolithography and ion implantation.

The primary performance:

1.Extreme hardness.

2.High flexural strength and elastic modulus.

3.Superior thermal expansion coefficient.

4.Outstanding thermal conductivity.

5.Superb chemical corrosion resistance.

Semicorex provides high-end customized services to our valued customers. Using advanced CNC machining centers, Semicorex meticulously and precisely processes silicon carbide materials to create the SiC wafer grinding plate with specific dimensions tailored to customer specifications. In order to serve customers with high-quality products, Semicorex SiC wafer grinding plate must undergo strict quality inspections such as dimensional accuracy, strength, hardness and other performance tests before leaving the factory.