Silicon Carbide ICP Etching Plate

Silicon Carbide ICP Etching Plate is competent in delivering stable support and precise positioning for wafers in the etching operations, efficiently preventing reductions in etching precision brought by vibration or displacement.

Silicon Carbide ICP Etching Plate has thermal management capabilities.Superior thermal conductivity of SIC ceramic gives Silicon Carbide ICP Etching Plate the ability to quickly dissipate heat, which helps to prevent local overheating of the workpiece and ensure the uniformity of the etching temperature, thereby improving the etching quality. SiC ceramics have a low coefficient of thermal expansion, which allows the Silicon Carbide ICP Etching Plate to maintain good dimensional stability and reduce workpiece displacement or deformation caused by thermal expansion.

Relying on its excellent hardness and strength properties, Silicon Carbide ICP Etching Plate shows the ability to tolerate the mechanical stress and plasma impact encountered during the etching process with minimal deformation or damage. This ability effectively improves the yield and production efficiency of semiconductor devices.

The ICP operating environment requires semiconductor-level cleanliness. Semicorex’s Silicon Carbide ICP Etching Plate can fully meet this requirement, delivering exceptional resistance to the chemical gases (such as chlorine and fluorine) and plasma of ICP etching environments. This significant feature keeps the process environment clean by reducing the amount of contaminants released during etching operations.

Semicorex prioritizes user convenience, offering customized designs of Silicon Carbide ICP Etching Plate that seamlessly integrate with existing ICP etching systems and are compatible with various configurations. This allows for a smooth transition, making it an ideal upgrade solution for equipment manufacturers.