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Barrel Susceptor with SiC Coating in Semiconductor

Barrel Susceptor with SiC Coating in Semiconductor

If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.

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Product Description

The Semicorex Barrel Susceptor with SiC Coating in Semiconductor is a premium quality graphite product coated with high-purity SiC, making it the ideal choice for use in high-temperature and corrosive environments. Its excellent density and thermal conductivity provide exceptional heat distribution and protection in semiconductor manufacturing applications.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Barrel Susceptor with SiC Coating in Semiconductor has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.


Parameters of Barrel Susceptor with SiC Coating in Semiconductor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Barrel Susceptor with SiC Coating in Semiconductor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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