Porous SiC Plate

Semicorex Porous SiC Plate is a high-performance ceramic material designed for advanced semiconductor and precision manufacturing applications. Engineered with a finely controlled porous structure, this plate offers exceptional mechanical strength, thermal stability, and chemical resistance, making it an ideal choice for use as a vacuum chuck in semiconductor processing.

Processed by precision sintering and pore-forming, the porous SiC plate has uniform porosity and optimized air permeability thus ensuring secure and stable adsorption of thin wafers, glass panels, and other delicate substrates. The carefully controlled pore size distribution will allow effective vacuum suction while holding its structural constituents together until the very last atom, virtually preventing deformation or damage for the material meant for further processing: wafers.

Its excellent thermal conductivity makes Porous SiC plate one of the best candidates for quick heat dissipation with uniform distribution of the temperature across the surface. This becomes important in many sorts of semiconductor manufacturing processes for maintaining stability within thermal conditions, which directly relates to the yield and quality of the product. Also, silicon carbide presents wear resistance well and a relatively high level of hardness, thus giving a longer life for the plate since surface wear and contamination are delayed over much extended usage.

Chemical inertness is another vital characteristic of the porous SiC plate. It exhibits strong resistance to acids, alkalis, and plasma exposure, making it well-suited for harsh environments within semiconductor fabrication, such as etching, deposition, and chemical processing chambers. The non-reactive nature of SiC prevents unwanted chemical interactions, preserving the purity of the processed materials and enhancing production reliability.

Moreover, the lightweight nature of porous SiC, combined with its robust mechanical properties, facilitates easy handling and integration into precision machinery. The low thermal expansion coefficient ensures dimensional stability even under extreme temperature fluctuations, minimizing the risk of warping or misalignment during operation.

The porous SiC plate can be customized to meet specific application requirements, including variations in porosity, thickness, and surface finishing. Advanced machining and polishing techniques can be applied to achieve ultra-flat surfaces with minimal roughness, further enhancing its performance as a vacuum chuck material.

Semicorex Porous Silicon Carbide Plate is a highly specialized ceramic component that offers a combination of high strength, excellent thermal and chemical stability, and superior wear resistance. Its unique porous structure enables effective vacuum suction, ensuring secure wafer handling in semiconductor and precision industries. As a result, it is an essential material for high-precision applications where performance, durability, and reliability are paramount.