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6" Wafer Holders

Semicorex 6" Wafer Holders are high-performance carrier engineered for the rigorous demands of SiC epitaxial growth. Choose Semicorex for unmatched material purity, precision engineering, and proven reliability in high-temperature, high-yield SiC processes.*

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Product Description

Semicorex 6" wafer holders are specifically engineered to meet the demanding requirements of SiC (Silicon Carbide) epitaxial growth processes. Designed for use in high-temperature, chemically reactive environments, these holders provide superior mechanical stability, thermal uniformity, and process reliability, making them an essential component for advanced SiC epitaxy applications.


During the wafer manufacturing process, some wafer substrates need to further construct epitaxial layers to facilitate the manufacture of devices. Typical examples include LED light-emitting devices, which require the preparation of GaAs epitaxial layers on silicon substrates; SiC epitaxial layers are grown on conductive SiC substrates to construct devices such as SBDs and MOSFETs for high voltage, high current and other power applications; GaN epitaxial layers are constructed on semi-insulating SiC substrates to further construct HEMT and other devices for communication and other radio frequency applications. This process is inseparable from CVD equipment.


In CVD equipment, the substrate cannot be placed directly on metal or simply on a base for epitaxial deposition, because it involves various factors such as gas flow direction (horizontal, vertical), temperature, pressure, fixation, and falling contaminants. Therefore, a base is needed, and then the substrate is placed on a tray, and then epitaxial deposition is performed on the substrate using CVD technology. This base is a SiC-coated graphite base (6" wafer holders).


The 6" wafer holders are optimized for excellent thermal management, ensuring uniform heat distribution across the wafer surface. This results in improved layer uniformity, reduced defect density, and enhanced overall yield during SiC epitaxial growth. The design accommodates precise wafer clamping and alignment, minimizing particle generation and mechanical stress that can otherwise impact the final device quality.


Whether you are conducting research and development or full-scale production of SiC-based power devices, our 6" wafer holders provide the robust performance and reliability needed to maximize your process efficiency. We also offer customization services to adapt the holder design to your unique system parameters, helping you achieve the highest standards in epitaxial wafer production.


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