Semicorex SiC Coated Wafer Susceptors are high-performance carrier designed specifically for ultrathin film deposition under pressureless conditions. With advanced materials engineering, precision porosity control, and robust SiC coating technology, Semicorex delivers industry-leading reliability and customization to meet the evolving needs of next-generation semiconductor manufacturing.*
Semicorex SiC Coated Wafer Susceptors are designed to meet the pressing requirements for the manufacture of advanced semiconductors, especially in pressureless ultrathin film deposition systems. Precision-designed, they offer superior thermal performance, chemical durability, and mechanical stability—essential for next-generation environments for thin film processing.
In deposition techniques that do not employ pressure, like atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD) for very thin films, the major requirements are a uniform temperature distribution and surface stability. The uniqueness of our susceptor design lies in the fact that it incorporates a high-purity porous substrate which enables it to work effectively under vacuum or near-vacuum conditions thus reducing thermal stress and providing uniform energy transfer over the wafer surface.
The multi-hole structure is a key innovation: it helps reduce thermal mass, promotes even gas flow distribution, and mitigates pressure fluctuations that could otherwise compromise deposition uniformity. This structure also contributes to faster thermal ramp-up and cooldown cycles, enhancing overall throughput and process control.
We offer a range of susceptor sizes, geometries, and porosity levels to match various deposition system designs and wafer dimensions. The modular nature of our manufacturing process allows for customization to meet specific thermal, mechanical, and chemical requirements of the client’s thin film process.
Semicorex SiC Coated Wafer Susceptor is a high-performance solution tailored to the unique challenges of pressureless ultrathin film deposition. Its combination of porous structural design and robust SiC coating provides optimal support for high-precision semiconductor manufacturing processes, enabling better film quality, higher yields, and lower operational costs.