8 inch EPI Susceptor

Semicorex 8 Inch EPI Susceptor is a high-tech wafer support part which is used in epitaxial deposition operations for the manufacture of semiconductors. It is manufactured with sufficiently in-pure graphite core material coated with a thick, continuous uniform layer of silicon carbide (SiC) used in epitaxial reactors where thermal stability, chemical resistance and, uniformity of deposition is important. The 8-inch diameter is standardized to industry specifications for equipment which processes 200 mm wafers and therefore provides reliable integration into existing fabrication multitasking.  

Epitaxial growth requires a highly controlled thermal environment and relatively inert material interactions. In both instances SiC coated graphite will be perform positively. The graphite core has very high thermal conductivity and very low thermal expansion, meaning with a sufficiently designed heating source that the heat from the graphite core can be rapidly transferred and maintain consistent temperature gradients across the surface of the wafer. The outer layer of SiC is in effect the outer shell of the susceptor. The SiC layer protects the susceptor core from high temperatures, the corrosive by-products of the process gas such as hydrogen, the highly corrosive properties of chlorinated silane, and mechanical destruction due to the cumulative nature of mechanical wear caused over repeated heating cycles. Overall we can reasonably predict that as long as this dual material structure is sufficiently thick, the susceptor will remain both mechanically sound and chemically inert in periods of prolonged heating. Conclusively, we have empirically observed this when operating within relevant thermal ranges, and the SiC layer provides a reliable barrier between the process and the graphics core, maximizing opportunities for product quality while maximizing tools service length.

Graphite components have an essential and incredibly important part in semiconductor manufacturing processes, and the graphite material quality is a significant factor in performance of the product. At Semicorex we have stringent control at every step of our production process so we can have highly reproducible material homogeneity and consistency from batch to batch. With our small batch production process, we have small carbonization furnaces with a chamber volume of only 50 cubic meters, allowing us to maintain tighter controls in the production process. Each graphite block undergoes individual monitoring, trackable throughout our process. In addition to the multi-point temperature monitoring within the furnace, we track temperature at the material surface, minimizing temperature deviations to a very narrow range throughout the production process. Our attention to thermal management allows us to minimize internal stress and produce highly stable and reproducible graphite components for semiconductor applications.

The SiC coating is applied via chemical vapor deposition (CVD), and produces a solid, clean finished surface with a fine-grain matrix that reduces particle generation; and therefore, the clean CVD process is enhanced. The CVD process control of coated film thickness assures uniformity and is important for the flatness and dimensional stability through thermal cycling. This ultimately provides excellent wafer planarity, resulting in the most even layer deposition during the epitaxy process.—a key parameter for achieving high-performance semiconductor devices such as power MOSFETs, IGBTs, and RF components.

Dimensional consistency is yet another fundamental advantage of the 8 Inch EPI Susceptor manufactured by Semicorex. The susceptor is engineered to strict tolerances resulting in great compatibility with wafer handling robots and a precision fit in heating zones. The susceptor surface is polished and customized to the particular thermal and flow conditions of the specific epitaxial reactor that the susceptor will be deployed into. Options, for example lift pin holes, pocket recesses or anti-slip surfaces can all be matched to the specific requirements of OEM tool designs and processes.

Each Susceptor undergoes multiple tests for both thermal performance and coating integrity during production. Quality control methods including dimensional measurement and verification, coating adhesion tests, thermal shock resistance tests, and chemical resistance tests are applied to ensure reliability and performance are achieved even in aggressive epitaxial environments. The result is a product that ultimately meets and exceeds the current demanding requirements of the semiconductor fabrication industry.

Semicorex 8 Inch EPI Susceptor is made from SiC coated graphite that balances thermal conductivity, mechanical rigidity, and chemical inertness. The 8 Inch susceptor is a key component for high-volume epitaxy growth applications due to its success in producing stable, clean, wafer support at high temperatures resulting in high-yield, high-uniformity defined epitaxial processes. The 8-inch size of the EPI Susceptor is most commonly seen in standard 8-inch equipment in the market and is interchangeable with existing customers equipment. In its standard configuration the EPI Susceptor is highly customizable.