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SiC Graphite Wafer Susceptors, We supply professional service, prompt reply, timely delivery, excellent quality and best price to our customers. Satisfaction and good credit to every customer is our priority. We focus on every detail of order processing for customers till they have received safe and sound products with good logistics service and economical cost. Depending on this, our products are sold very well in the countries in Africa, the Mid-East and Southeast Asia. Adhering to the business philosophy of ‘customer first, forge ahead', we sincerely welcome clients from at home and abroad to cooperate with us.

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    You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Planetary Susceptor

    Planetary Susceptor

    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
  • Etching Wafer Carrier

    Etching Wafer Carrier

    Semicorex Etching Wafer Carrier with CVD SiC Coating is an advanced, high-performance solution tailored for demanding semiconductor etching applications. Its superior thermal stability, chemical resistance, and mechanical durability make it an essential component in modern wafer fabrication, ensuring high efficiency, reliability, and cost-effectiveness for semiconductor manufacturers worldwide.*
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • SiC Heating Filament

    SiC Heating Filament

    Semicorex SiC Heating Filament is a silicon carbide coated graphite heater designed for wafer heating in advanced semiconductor manufacturing. Choosing Semicorex means selecting a trusted partner that delivers high-purity materials, precision customization, and long-lasting performance for the most demanding thermal processes.*
  • Related Blog
  • Reviews

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

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