Satellite Plate

Semicorex Satellite Plate is a vital wafer carrier during the epitaxial growth process, guaranteeing uniform deposition and optimal process efficiency. Constructed from high-purity graphite and coated with a robust silicon carbide (SiC) layer, this plate delivers exceptional thermal stability, chemical resistance, and mechanical strength, solidifying its position as an indispensable component in high-performance semiconductor manufacturing.

With a high-purity graphite base, the Satellite Plate excels in thermal conductivity and structural integrity. The SiC coating significantly boosts its durability, providing high-temperature resistance, chemical inertness, and dramatically reducing particle generation. This powerful combination ensures that the plate endures harsh processing conditions while consistently performing at a high level. The graphite base facilitates efficient heat transfer, ensuring uniform temperature distribution across the wafer, while the SiC coating protects against corrosive process gases, preventing contamination and extending the service life. Additionally, the SiC surface minimizes particle release, which is critical for achieving high-yield semiconductor fabrication.

Designed specifically for seamless integration with Aixtron G5+ systems, the Satellite Plate guarantees precise wafer positioning and rotational balance, essential for maintaining stable thermal conditions and reducing defect rates. The advanced material composition of the plate not only extends its service life but also significantly lowers operational costs and enhances manufacturing productivity.

Primarily utilized in the Metal Organic Chemical Vapor Deposition (MOCVD) process, the Satellite Plate is crucial for growing epitaxial layers on semiconductor wafers. It plays a key role in the production of advanced semiconductor devices, including LEDs, SiC and GaN-based power electronics, photonic and optoelectronic components, and high-frequency RF devices. By ensuring stable thermal conditions and minimizing contamination, the Satellite Plate guarantees consistent epitaxial layer growth, leading to improved wafer handling and higher yield rates. Its optimized design secures wafer support efficiently, reducing defects and ensuring precision throughout the semiconductor processing stages.

Semicorex Satellite Plate serves as an essential component for Aixtron G5+ epitaxy reactors, providing unparalleled durability, chemical resistance, and thermal performance. Its cutting-edge material composition and engineering make it critical to the semiconductor manufacturing process, ensuring the production of high-yield and high-quality wafers. Invest in the Satellite Plate to elevate your semiconductor fabrication and achieve excellence in epitaxial growth processes.