English
Home > Products > TaC COATING

China TaC COATING Manufacturers, Suppliers, Factory

We pursue the administration tenet of "Quality is top-quality, Company is supreme, Track record is first", and will sincerely create and share success with all purchasers for TaC COATING,CVD TaC,Tantalum Carbide,Planetary Plate,WAFER SUSCEPTOR, In case you are looking for a high quality, quickly delivery, best just after assistance and good value supplier in China for long-term organization connection, we're going to be your most effective choice.
TaC COATING, Our company is working by the operation principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a friendly relationship with businessman from all over the world.

Related Products

Hot Products

  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • SiC Graphite RTP Carrier Plate for MOCVD

    SiC Graphite RTP Carrier Plate for MOCVD

    Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • TaC Coated Tube

    TaC Coated Tube

    Semicorex TaC Coated Tube represents a pinnacle of material science, engineered to withstand the extreme conditions encountered in advanced semiconductor fabrication. Created by applying a dense, uniform layer of TaC onto a high-purity isotropic graphite substrate via Chemical Vapor Deposition (CVD), the TaC Coated Tube offers a compelling combination of properties that surpass conventional materials in demanding high-temperature and chemically aggressive environments.**
  • Related Blog
  • Reviews

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

Related Search

CVD TaC coatingCVD TAC COATINGporous graphite;TaC coating;Tantalum Carbide;Tantalum carbide coated;TaC Coated Components;cvd coating;graphite part;silicon carbide epitaxy;semiconductor component;TaC coatingtac coating graphiteTaC Coating;guide ring;RTP ring;focus ring;SiC epitaxial;CVD TaC coating;tantalum carbide;tantalum carbide coating;epi wafer;epitaxial componentsTaC Coating;wafer carrier trays;Semiconductor Shower Head;semiconductor components;spare parts for epitaxial;CVD TaC;CVD coating;tantalum carbide;tantalum carbide coating;MOCVDtac coatingstantalum carbide tac;tac coating on graphite;graphite porosity;porous tantalum carbide;tantalum carbide coating;SiC epitaxy;porous graphite;porous specialty graphite;CVD TaC;wafer processtantalum carbide;wafer chuck;vacuum chuck;tac coating;wafer carrier;EPI Susceptor;TaC-coated Graphite;SiC epitaxial;tantalum carbide tac;MOCVDwafer carrier;wafer susceptor;wafer holder;tantalum carbide;TaC coating;graphite plate;epitaxial growth;tantalum carbide tac;MOCVD;TaC-coated Graphitewafer chuck;tantalum carbide;vacuum chuck;tac coating;tantalum carbide price;TaC-coated Graphite;tantalum carbide coating;MOCVD;epi wafer;epitaxial components

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept