ICP Silicon Carbon Coated Graphite

Semicorex's ICP Silicon Carbon Coated Graphite is the ideal choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns.

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Product Description

Wafer carriers used in epitaxial growth processing must endure high temperatures and harsh chemical cleaning. Semicorex ICP Silicon Carbon Coated Graphite susceptors are engineered specifically for these demanding epitaxy equipment applications. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring longevity and optimal results.
Our ICP Silicon Carbon Coated Graphite is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
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Parameters of ICP Silicon Carbon Coated Graphite

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300